technical
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Main memory
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Description
Memory type
Operating Voltage
Latency period
512 MB ECC DDR2 667-RAM (1x 512 MB) ATP
DDR2-667 ECC
1.8 V
3 ns
1024 MB ECC DDR2 667-RAM (1x 1024 MB) ATP
DDR2-667 ECC
1.8 V
3 ns
2048 MB ECC DDR2 667-RAM (1x 2048 MB) ATP
DDR2-667 ECC
1.8 V
3 ns
